Simulation study of InGaN GaN multiple quantum well solar cells

المؤلفون المشاركون

Sayad, Yasin
Nuwiri, Abd al-Qadir

المصدر

Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.

الناشر

جامعة العربي بن مهيدي بأم البواقي

تاريخ النشر

2014-05-31

دولة النشر

الجزائر

عدد الصفحات

3

التخصصات الرئيسية

هندسة المواد والمعادن

الموضوعات

الملخص الإنجليزي

It’s known that indium gallium nitride InGaN alloys has a direct band gap varying from 0.7 to 3.4 eV which covers nearly the whole solar spectrum making it material of choice to make tandem solar cells.

In other hand, it’s experimentally known that uses of InGaN / GaN multiple quantum well MQW structures in GaN based devices decreases surface recombination and, thus, enhances devices performance.

Here, we present a simulation study of multiple quantum well MQW InGaN/GaN solar cells, where cell's active region is formed by a number of InGaN quantum wells (QWs) separated byGaN quantum barriers (QBs).

We will present indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on solar cell parameters.

نوع البيانات

أوراق مؤتمرات

رقم السجل

BIM-429595

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Sayad, Yasin& Nuwiri, Abd al-Qadir. 2014-05-31. Simulation study of InGaN GaN multiple quantum well solar cells. International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria). . Vol. 4, no. 1 (May. 2014), pp.1-3.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-429595

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Sayad, Yasin& Nuwiri, Abd al-Qadir. Simulation study of InGaN GaN multiple quantum well solar cells. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2014-05-31.
https://search.emarefa.net/detail/BIM-429595

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Sayad, Yasin& Nuwiri, Abd al-Qadir. Simulation study of InGaN GaN multiple quantum well solar cells. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-429595