Simulation study of InGaN GaN multiple quantum well solar cells

Publication Date

2014-05-31

Country of Publication

Algeria

No. of Pages

Main Subjects

Materials Science , Minerals

Topics

English Abstract

It’s known that indium gallium nitride InGaN alloys has a direct band gap varying from 0.7 to 3.4 eV which covers nearly the whole solar spectrum making it material of choice to make tandem solar cells.

In other hand, it’s experimentally known that uses of InGaN / GaN multiple quantum well MQW structures in GaN based devices decreases surface recombination and, thus, enhances devices performance.

Here, we present a simulation study of multiple quantum well MQW InGaN/GaN solar cells, where cell's active region is formed by a number of InGaN quantum wells (QWs) separated byGaN quantum barriers (QBs).

We will present indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on solar cell parameters.

Data Type

Conference Papers

Record ID

BIM-429595

American Psychological Association (APA)

Sayad, Yasin& Nuwiri, Abd al-Qadir. 2014-05-31. Simulation study of InGaN GaN multiple quantum well solar cells. International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria). . Vol. 4, no. 1 (May. 2014), pp.1-3.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-429595

Modern Language Association (MLA)

Sayad, Yasin& Nuwiri, Abd al-Qadir. Simulation study of InGaN GaN multiple quantum well solar cells. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2014-05-31.
https://search.emarefa.net/detail/BIM-429595

American Medical Association (AMA)

Sayad, Yasin& Nuwiri, Abd al-Qadir. Simulation study of InGaN GaN multiple quantum well solar cells. . International Conference on New Materials and Active Devices (2st : 2014 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-429595