Midinfrared InAsSbNInAs Multiquantum Well Light-Emitting Diodes

الملخص EN

Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy.

The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature.

Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW.

Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.