Midinfrared InAsSbNInAs Multiquantum Well Light-Emitting Diodes
Joint Authors
Krier, A.
Cheetham, K. J.
Zhuang, Q.
Carrington, P. J.
de la Mare, M.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-09-05
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy.
The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature.
Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW.
Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.
American Psychological Association (APA)
Carrington, P. J.& de la Mare, M.& Cheetham, K. J.& Zhuang, Q.& Krier, A.. 2011. Midinfrared InAsSbNInAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics،Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-449265
Modern Language Association (MLA)
Carrington, P. J.…[et al.]. Midinfrared InAsSbNInAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics No. 2011 (2011), pp.1-8.
https://search.emarefa.net/detail/BIM-449265
American Medical Association (AMA)
Carrington, P. J.& de la Mare, M.& Cheetham, K. J.& Zhuang, Q.& Krier, A.. Midinfrared InAsSbNInAs Multiquantum Well Light-Emitting Diodes. Advances in OptoElectronics. 2011. Vol. 2011, no. 2011, pp.1-8.
https://search.emarefa.net/detail/BIM-449265
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-449265
