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Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET
المؤلف
المصدر
Journal of Electrical and Computer Engineering
العدد
المجلد 2013، العدد 2013 (31 ديسمبر/كانون الأول 2013)، ص ص. 1-10، 10ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2013-03-14
دولة النشر
مصر
عدد الصفحات
10
التخصصات الرئيسية
العلوم الهندسية و تكنولوجيا المعلومات
تكنولوجيا المعلومات وعلم الحاسوب
الملخص EN
The novel probabilistic models of the random variations in nanoscale MOSFET's high frequency performance defined in terms of gate capacitance and transition frequency have been proposed.
As the transition frequency variation has also been considered, the proposed models are considered as complete unlike the previous one which take only the gate capacitance variation into account.
The proposed models have been found to be both analytic and physical level oriented as they are the precise mathematical expressions in terms of physical parameters.
Since the up-to-date model of variation in MOSFET's characteristic induced by physical level fluctuation has been used, part of the proposed models for gate capacitance is more accurate and physical level oriented than its predecessor.
The proposed models have been verified based on the 65 nm CMOS technology by using the Monte-Carlo SPICE simulations of benchmark circuits and Kolmogorov-Smirnov tests as highly accurate since they fit the Monte-Carlo-based analysis results with 99% confidence.
Hence, these novel models have been found to be versatile for the statistical/variability aware analysis/design of nanoscale MOSFET-based analog/mixed signal circuits and systems.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Banchuin, Rawid. 2013. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. Journal of Electrical and Computer Engineering،Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-453082
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Banchuin, Rawid. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. Journal of Electrical and Computer Engineering No. 2013 (2013), pp.1-10.
https://search.emarefa.net/detail/BIM-453082
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Banchuin, Rawid. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. Journal of Electrical and Computer Engineering. 2013. Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-453082
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-453082
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
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