Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET
Author
Source
Journal of Electrical and Computer Engineering
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-03-14
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Engineering Sciences and Information Technology
Information Technology and Computer Science
Abstract EN
The novel probabilistic models of the random variations in nanoscale MOSFET's high frequency performance defined in terms of gate capacitance and transition frequency have been proposed.
As the transition frequency variation has also been considered, the proposed models are considered as complete unlike the previous one which take only the gate capacitance variation into account.
The proposed models have been found to be both analytic and physical level oriented as they are the precise mathematical expressions in terms of physical parameters.
Since the up-to-date model of variation in MOSFET's characteristic induced by physical level fluctuation has been used, part of the proposed models for gate capacitance is more accurate and physical level oriented than its predecessor.
The proposed models have been verified based on the 65 nm CMOS technology by using the Monte-Carlo SPICE simulations of benchmark circuits and Kolmogorov-Smirnov tests as highly accurate since they fit the Monte-Carlo-based analysis results with 99% confidence.
Hence, these novel models have been found to be versatile for the statistical/variability aware analysis/design of nanoscale MOSFET-based analog/mixed signal circuits and systems.
American Psychological Association (APA)
Banchuin, Rawid. 2013. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. Journal of Electrical and Computer Engineering،Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-453082
Modern Language Association (MLA)
Banchuin, Rawid. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. Journal of Electrical and Computer Engineering No. 2013 (2013), pp.1-10.
https://search.emarefa.net/detail/BIM-453082
American Medical Association (AMA)
Banchuin, Rawid. Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET. Journal of Electrical and Computer Engineering. 2013. Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-453082
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-453082