Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells
المؤلفون المشاركون
Wang, Fang-Hsing
Yang, Cheng-Fu
Tzeng, Hua-Tz
Huang, Chia-Cheng
المصدر
International Journal of Photoenergy
العدد
المجلد 2013، العدد 2013 (31 ديسمبر/كانون الأول 2013)، ص ص. 1-7، 7ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2013-03-31
دولة النشر
مصر
عدد الصفحات
7
التخصصات الرئيسية
الملخص EN
A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO) was sintered at 1400°C as a target.
The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at 300°C by changing the deposition power from 50 W to 150 W.
The effects of deposition power on the crystallization size, lattice constant (c), resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied.
The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect.
The variations in the optical band gap (Eg) value of the GZO thin films were evaluated from the plots of (αhν)=c(hν-EG)1/2 , revealing that the measured Eg value decreased with increasing deposition power.
As compared with the results deposited at room temperature by Gong et al., (2010) the 300°C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger Eg value.
For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power.
The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Wang, Fang-Hsing& Huang, Chia-Cheng& Yang, Cheng-Fu& Tzeng, Hua-Tz. 2013. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells. International Journal of Photoenergy،Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-459092
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Wang, Fang-Hsing…[et al.]. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells. International Journal of Photoenergy No. 2013 (2013), pp.1-7.
https://search.emarefa.net/detail/BIM-459092
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Wang, Fang-Hsing& Huang, Chia-Cheng& Yang, Cheng-Fu& Tzeng, Hua-Tz. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited Ga2O3-ZnO Thin Films and Applications in p-i-n α-Si : H Thin-Film Solar Cells. International Journal of Photoenergy. 2013. Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-459092
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-459092
قاعدة معامل التأثير والاستشهادات المرجعية العربي "ارسيف Arcif"
أضخم قاعدة بيانات عربية للاستشهادات المرجعية للمجلات العلمية المحكمة الصادرة في العالم العربي
تقوم هذه الخدمة بالتحقق من التشابه أو الانتحال في الأبحاث والمقالات العلمية والأطروحات الجامعية والكتب والأبحاث باللغة العربية، وتحديد درجة التشابه أو أصالة الأعمال البحثية وحماية ملكيتها الفكرية. تعرف اكثر