CMOS Ultra-Wideband Low Noise Amplifier Design

الملخص EN

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA).

The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor.

This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB.

Good input and output impedance matching and good isolation are achieved over the operating frequency band.

The proposed UWB LNA is driven from a 1.8 V supply.

The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.