CMOS Ultra-Wideband Low Noise Amplifier Design
Joint Authors
Yoshida, Keiji
Pokharel, Ramesh K.
Ragab, M.
Allam, Ahmed
Kanaya, H.
Yousef, K.
Jia, H.
Source
International Journal of Microwave Science and Technology
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-04-30
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
This paper presents the design of ultra-wideband low noise amplifier (UWB LNA).
The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor.
This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB.
Good input and output impedance matching and good isolation are achieved over the operating frequency band.
The proposed UWB LNA is driven from a 1.8 V supply.
The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.
American Psychological Association (APA)
Yousef, K.& Jia, H.& Pokharel, Ramesh K.& Allam, Ahmed& Ragab, M.& Kanaya, H.…[et al.]. 2013. CMOS Ultra-Wideband Low Noise Amplifier Design. International Journal of Microwave Science and Technology،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-463923
Modern Language Association (MLA)
Yousef, K.…[et al.]. CMOS Ultra-Wideband Low Noise Amplifier Design. International Journal of Microwave Science and Technology No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-463923
American Medical Association (AMA)
Yousef, K.& Jia, H.& Pokharel, Ramesh K.& Allam, Ahmed& Ragab, M.& Kanaya, H.…[et al.]. CMOS Ultra-Wideband Low Noise Amplifier Design. International Journal of Microwave Science and Technology. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-463923
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-463923
