Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices

المؤلف

Izpura, José Ignacio

المصدر

Advances in Condensed Matter Physics

العدد

المجلد 2013، العدد 2013 (31 ديسمبر/كانون الأول 2013)، ص ص. 1-10، 10ص.

الناشر

Hindawi Publishing Corporation

تاريخ النشر

2013-09-30

دولة النشر

مصر

عدد الصفحات

10

التخصصات الرئيسية

الفيزياء

الملخص EN

Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true.

Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide.

Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free from surface effects.

By replacing this unjustified assumption with a proper model for GaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.

نمط استشهاد جمعية علماء النفس الأمريكية (APA)

Izpura, José Ignacio. 2013. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics،Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-483882

نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)

Izpura, José Ignacio. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics No. 2013 (2013), pp.1-10.
https://search.emarefa.net/detail/BIM-483882

نمط استشهاد الجمعية الطبية الأمريكية (AMA)

Izpura, José Ignacio. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics. 2013. Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-483882

نوع البيانات

مقالات

لغة النص

الإنجليزية

الملاحظات

Includes bibliographical references

رقم السجل

BIM-483882