Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices
Author
Source
Advances in Condensed Matter Physics
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-09-30
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true.
Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide.
Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free from surface effects.
By replacing this unjustified assumption with a proper model for GaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.
American Psychological Association (APA)
Izpura, José Ignacio. 2013. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics،Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-483882
Modern Language Association (MLA)
Izpura, José Ignacio. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics No. 2013 (2013), pp.1-10.
https://search.emarefa.net/detail/BIM-483882
American Medical Association (AMA)
Izpura, José Ignacio. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics. 2013. Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-483882
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-483882