Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices

Author

Izpura, José Ignacio

Source

Advances in Condensed Matter Physics

Issue

Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-10, 10 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2013-09-30

Country of Publication

Egypt

No. of Pages

10

Main Subjects

Physics

Abstract EN

Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true.

Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide.

Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free from surface effects.

By replacing this unjustified assumption with a proper model for GaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.

American Psychological Association (APA)

Izpura, José Ignacio. 2013. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics،Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-483882

Modern Language Association (MLA)

Izpura, José Ignacio. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics No. 2013 (2013), pp.1-10.
https://search.emarefa.net/detail/BIM-483882

American Medical Association (AMA)

Izpura, José Ignacio. Surface-Assisted Luminescence : The PL Yellow Band and the EL of n-GaN Devices. Advances in Condensed Matter Physics. 2013. Vol. 2013, no. 2013, pp.1-10.
https://search.emarefa.net/detail/BIM-483882

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-483882