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Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors
المؤلفون المشاركون
Naito, Hiroyoshi
Matsukawa, Kimihiro
Hamada, Takashi
Nagase, Takashi
Watanabe, Mitsuru
المصدر
International Journal of Polymer Science
العدد
المجلد 2012، العدد 2012 (31 ديسمبر/كانون الأول 2012)، ص ص. 1-10، 10ص.
الناشر
Hindawi Publishing Corporation
تاريخ النشر
2012-11-27
دولة النشر
مصر
عدد الصفحات
10
التخصصات الرئيسية
الملخص EN
Printable organic thin-film transistor (O-TFT) is one of the most recognized technical issues nowadays.
Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ), and its applications for the gate-insulating layer of O-TFTs are introduced in this paper.
PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed.
The PMSQ film contains no mobile ionic impurities, and this is also important property for the practical use for the gate-insulating materials.
In the case of top-contact type TFT using poly(3-hexylthiophene) (P3HT) with PMSQ gate-insulating layer, the device properties were comparable with the TFTs having thermally grown SiO2 gate-insulating layer.
The feasibility of PMSQ as a gate-insulating material for O-TFTs, which was fabricated on a flexible plastic substrate, has been demonstrated.
Moreover, by the modification of PMSQ, further functionalities, such as surface hydrophobicity, high permittivity that allows low driving voltage, and photocurability that allows photolithography, could be appended to the PMSQ gate-insulating layers.
نمط استشهاد جمعية علماء النفس الأمريكية (APA)
Matsukawa, Kimihiro& Watanabe, Mitsuru& Hamada, Takashi& Nagase, Takashi& Naito, Hiroyoshi. 2012. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors. International Journal of Polymer Science،Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-503380
نمط استشهاد الجمعية الأمريكية للغات الحديثة (MLA)
Matsukawa, Kimihiro…[et al.]. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors. International Journal of Polymer Science No. 2012 (2012), pp.1-10.
https://search.emarefa.net/detail/BIM-503380
نمط استشهاد الجمعية الطبية الأمريكية (AMA)
Matsukawa, Kimihiro& Watanabe, Mitsuru& Hamada, Takashi& Nagase, Takashi& Naito, Hiroyoshi. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors. International Journal of Polymer Science. 2012. Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-503380
نوع البيانات
مقالات
لغة النص
الإنجليزية
الملاحظات
Includes bibliographical references
رقم السجل
BIM-503380
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