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Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors
Joint Authors
Naito, Hiroyoshi
Matsukawa, Kimihiro
Hamada, Takashi
Nagase, Takashi
Watanabe, Mitsuru
Source
International Journal of Polymer Science
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-11-27
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
Printable organic thin-film transistor (O-TFT) is one of the most recognized technical issues nowadays.
Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ), and its applications for the gate-insulating layer of O-TFTs are introduced in this paper.
PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed.
The PMSQ film contains no mobile ionic impurities, and this is also important property for the practical use for the gate-insulating materials.
In the case of top-contact type TFT using poly(3-hexylthiophene) (P3HT) with PMSQ gate-insulating layer, the device properties were comparable with the TFTs having thermally grown SiO2 gate-insulating layer.
The feasibility of PMSQ as a gate-insulating material for O-TFTs, which was fabricated on a flexible plastic substrate, has been demonstrated.
Moreover, by the modification of PMSQ, further functionalities, such as surface hydrophobicity, high permittivity that allows low driving voltage, and photocurability that allows photolithography, could be appended to the PMSQ gate-insulating layers.
American Psychological Association (APA)
Matsukawa, Kimihiro& Watanabe, Mitsuru& Hamada, Takashi& Nagase, Takashi& Naito, Hiroyoshi. 2012. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors. International Journal of Polymer Science،Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-503380
Modern Language Association (MLA)
Matsukawa, Kimihiro…[et al.]. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors. International Journal of Polymer Science No. 2012 (2012), pp.1-10.
https://search.emarefa.net/detail/BIM-503380
American Medical Association (AMA)
Matsukawa, Kimihiro& Watanabe, Mitsuru& Hamada, Takashi& Nagase, Takashi& Naito, Hiroyoshi. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors. International Journal of Polymer Science. 2012. Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-503380
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-503380