Temperature Dependence of GaN HEMT Small Signal Parameters

الملخص EN

This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range.

The changes with temperature for transconductance (gm), output impedance (Cds and Rds), feedback capacitance (Cdg), input capacitance (Cgs), and gate resistance (Rg) are measured.

The variations with temperature are established for gm, Cds, Rds, Cdg, Cgs, and Rg in the GaN technology.

This information is useful for MMIC designs.