Temperature Dependence of GaN HEMT Small Signal Parameters
Joint Authors
Hung, H. Alfred
Ibrahim, Amr A.
Darwish, Ali M.
Source
International Journal of Microwave Science and Technology
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-01-03
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range.
The changes with temperature for transconductance (gm), output impedance (Cds and Rds), feedback capacitance (Cdg), input capacitance (Cgs), and gate resistance (Rg) are measured.
The variations with temperature are established for gm, Cds, Rds, Cdg, Cgs, and Rg in the GaN technology.
This information is useful for MMIC designs.
American Psychological Association (APA)
Darwish, Ali M.& Ibrahim, Amr A.& Hung, H. Alfred. 2012. Temperature Dependence of GaN HEMT Small Signal Parameters. International Journal of Microwave Science and Technology،Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-510269
Modern Language Association (MLA)
Darwish, Ali M.…[et al.]. Temperature Dependence of GaN HEMT Small Signal Parameters. International Journal of Microwave Science and Technology No. 2011 (2011), pp.1-4.
https://search.emarefa.net/detail/BIM-510269
American Medical Association (AMA)
Darwish, Ali M.& Ibrahim, Amr A.& Hung, H. Alfred. Temperature Dependence of GaN HEMT Small Signal Parameters. International Journal of Microwave Science and Technology. 2012. Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-510269
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-510269
