Enhanced the response time of the p-n junction photodetector

الملخص EN

In the present work, the response time of p-n junction photo-detector has been achieved by using the rapid thermal annealing (RTA) technique in which the annealing time has been ranged from (5-25) s at (773 K) the result shows a good improvement in the time constant of the detector and it has beast result at (15) s which reach to (26.81) ns for (905) nm wavelength of GaAlAs laser.