Enhanced the response time of the p-n junction photodetector
Joint Authors
Salim, Evan T.
Fakhery, Makram A.
Khashan, Khawlah S.
Source
Engineering and Technology Journal
Issue
Vol. 26, Issue 04 (30 Apr. 2008), pp.423-428, 6 p.
Publisher
Publication Date
2008-04-30
Country of Publication
Iraq
No. of Pages
6
Main Subjects
Topics
Abstract AR
في هذا البحث، تم تحسين زمن الاستجابة لكاشف ضوئي نوع (p-n) باستخدام تقنية التلدين الحراري السريع (RTA )، و بأزمان تتراوح من s (25-5 ) عند درجة حرارة (K 773), و من النتائج لوحظ تحسن جيد في ثابت الزمن للكاشف و كانت أفضل نتيجة عند 15 s، إذ و صل زمن الاستجابة إلى 26.81 ns باستخدام ليزر أشباه الموصلات (GaAlAa) و بطول موجي (905nm).
Abstract EN
In the present work, the response time of p-n junction photo-detector has been achieved by using the rapid thermal annealing (RTA) technique in which the annealing time has been ranged from (5-25) s at (773 K) the result shows a good improvement in the time constant of the detector and it has beast result at (15) s which reach to (26.81) ns for (905) nm wavelength of GaAlAs laser.
American Psychological Association (APA)
Khashan, Khawlah S.& Salim, Evan T.& Fakhery, Makram A.. 2008. Enhanced the response time of the p-n junction photodetector. Engineering and Technology Journal،Vol. 26, no. 04, pp.423-428.
https://search.emarefa.net/detail/BIM-51840
Modern Language Association (MLA)
Khashan, Khawlah S.…[et al.]. Enhanced the response time of the p-n junction photodetector. Engineering and Technology Journal Vol. 26, no. 04 (2008), pp.423-428.
https://search.emarefa.net/detail/BIM-51840
American Medical Association (AMA)
Khashan, Khawlah S.& Salim, Evan T.& Fakhery, Makram A.. Enhanced the response time of the p-n junction photodetector. Engineering and Technology Journal. 2008. Vol. 26, no. 04, pp.423-428.
https://search.emarefa.net/detail/BIM-51840
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 426
Record ID
BIM-51840
