Study on temperature and etching effects on silicon oxide formation using laser ellipsometric method

الملخص EN

In this paper, a laser ellipsometric method is implemented to study the formation of oxide films on silicon substrate at room temperature in air.

Two lasers, He-Ne and semiconductor diode, as well as a tungsten halogen lamp, were used as a light source in this method to show the importance of coherency for accurate results.

The thickness of oxide layer was measured and the result is compared with that calculated for a monolayer of oxide.

Behavior of thermally formed oxides was studied using ellipsometry to determine polarizer angle as a function of etching time.