Electrical and photovoltaic properties of in-pSi contact

الملخص EN

In the present work, the electrical and photovoltaic properties of In-spin contact were investigated for the first time.

Two creditable methods were used to determine the value of barrier height for this contact.

Experimental results shows a reasonable agreement with the simple Schottcky-Mott theory.

The contact shows good response to white light when it works under bias condition.

Peak response of 0.22 A / W at 850 nm wavelength was registered.