Electrical and photovoltaic properties of in-pSi contact
Author
Source
Engineering and Technology Journal
Issue
Vol. 25, Issue 01 (30 Mar. 2007), pp.49-55, 7 p.
Publisher
Publication Date
2007-03-30
Country of Publication
Iraq
No. of Pages
7
Main Subjects
Topics
Abstract AR
في هذا البحث، جرى دراسة الخصائص الكهربائية و الفولطائية الضوئية لاتصال In-PSi و لأول مرة على حد علمنا.
استخدمت طريقتان موثوقتان لإيجاد قيمة حاجز الجهد لهذا الاتصال، إذ أظهرت النتائج اتفاقا لقيمة ارتفاع الحاجز مع نظرية شوتكي-موت البسيطة.
أظهر الاتصال استجابة جيدة للضوء الأبيض مما يؤهله للعمل كدايود ضوئي في مدى الأشعة المرئية.
تم الحصول على استجابية طيفية بمقدار 0.22 A / W عند الطول الموجي 850 nm.
Abstract EN
In the present work, the electrical and photovoltaic properties of In-spin contact were investigated for the first time.
Two creditable methods were used to determine the value of barrier height for this contact.
Experimental results shows a reasonable agreement with the simple Schottcky-Mott theory.
The contact shows good response to white light when it works under bias condition.
Peak response of 0.22 A / W at 850 nm wavelength was registered.
American Psychological Association (APA)
Yahya, Khalid Z.. 2007. Electrical and photovoltaic properties of in-pSi contact. Engineering and Technology Journal،Vol. 25, no. 01, pp.49-55.
https://search.emarefa.net/detail/BIM-53516
Modern Language Association (MLA)
Yahya, Khalid Z.. Electrical and photovoltaic properties of in-pSi contact. Engineering and Technology Journal Vol. 25, no. 01 (2007), pp.49-55.
https://search.emarefa.net/detail/BIM-53516
American Medical Association (AMA)
Yahya, Khalid Z.. Electrical and photovoltaic properties of in-pSi contact. Engineering and Technology Journal. 2007. Vol. 25, no. 01, pp.49-55.
https://search.emarefa.net/detail/BIM-53516
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 51
Record ID
BIM-53516
