Performance study of a HEMT for power application

الملخص EN

In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application.

We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz.