Performance study of a HEMT for power application
Joint Authors
Kourdi, Zakariyya
Khaouani, Muhammad
Buazzah, Ahlam juwayn
Buazzah, Bin Yunus
Source
Journal of New Technology and Materials
Issue
Vol. 5, Issue 1 (30 Jun. 2015), pp.7-10, 4 p.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2015-06-30
Country of Publication
Algeria
No. of Pages
4
Main Subjects
Topics
Abstract EN
In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application.
We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz.
American Psychological Association (APA)
Kourdi, Zakariyya& Buazzah, Bin Yunus& Buazzah, Ahlam juwayn& Khaouani, Muhammad. 2015. Performance study of a HEMT for power application. Journal of New Technology and Materials،Vol. 5, no. 1, pp.7-10.
https://search.emarefa.net/detail/BIM-604879
Modern Language Association (MLA)
Kourdi, Zakariyya…[et al.]. Performance study of a HEMT for power application. Journal of New Technology and Materials Vol. 5, no. 1 (2015), pp.7-10.
https://search.emarefa.net/detail/BIM-604879
American Medical Association (AMA)
Kourdi, Zakariyya& Buazzah, Bin Yunus& Buazzah, Ahlam juwayn& Khaouani, Muhammad. Performance study of a HEMT for power application. Journal of New Technology and Materials. 2015. Vol. 5, no. 1, pp.7-10.
https://search.emarefa.net/detail/BIM-604879
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 10
Record ID
BIM-604879
