Nanostructure NiO films prepared by PLD and their optoelectronic properties

الملخص EN

NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser.

Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy.

FTIR spectra conformed of NiO bonding.

AFM images show the particle size about ~66nm.

The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV.

The current voltage characterization of NiO/Si heterojunction has good rectifying.

Keywords : NiO thin film, photodetector, Characterization of NiO