Ion beam effects on AC conductivity of Ge-Se-Bi films

الملخص EN

In this study, different types of ions are used to improve the electrical properties of Ge10Se70Bi20 thin film.

The ac conductivity σac(ω), dielectric constant ε`(ω) and dielectric loss ε``(ω) are studied for the amorphous semiconductor thin films.

The films are irradiated using nitrogen, argon, hydrogen and oxygen ions, the ion fluence equals 15x1014 ions/cm2.

It can observe that the σac(ω) increases after irradiation and reach to the higher value in case of oxygen ion beam.

In addition, the dielectric loss ε`` increases after irradiation and reaching to higher value in case of oxygen ion beam.