Ion beam effects on AC conductivity of Ge-Se-Bi films
Joint Authors
Abd al-Rahim, A. M.
Ashur, A. H.
Abd al-Hamid, M. M.
Source
Arab Journal of Nuclear Sciences and Applications
Issue
Vol. 49, Issue 4 (31 Oct. 2016), pp.31-40, 10 p.
Publisher
The Egyptian Society of Nuclear Science and Applications
Publication Date
2016-10-31
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
In this study, different types of ions are used to improve the electrical properties of Ge10Se70Bi20 thin film.
The ac conductivity σac(ω), dielectric constant ε`(ω) and dielectric loss ε``(ω) are studied for the amorphous semiconductor thin films.
The films are irradiated using nitrogen, argon, hydrogen and oxygen ions, the ion fluence equals 15x1014 ions/cm2.
It can observe that the σac(ω) increases after irradiation and reach to the higher value in case of oxygen ion beam.
In addition, the dielectric loss ε`` increases after irradiation and reaching to higher value in case of oxygen ion beam.
American Psychological Association (APA)
Abd al-Rahim, A. M.& Abd al-Hamid, M. M.& Ashur, A. H.. 2016. Ion beam effects on AC conductivity of Ge-Se-Bi films. Arab Journal of Nuclear Sciences and Applications،Vol. 49, no. 4, pp.31-40.
https://search.emarefa.net/detail/BIM-724543
Modern Language Association (MLA)
Abd al-Rahim, A. M.…[et al.]. Ion beam effects on AC conductivity of Ge-Se-Bi films. Arab Journal of Nuclear Sciences and Applications Vol. 49, no. 4 (Oct. 2016), pp.31-40.
https://search.emarefa.net/detail/BIM-724543
American Medical Association (AMA)
Abd al-Rahim, A. M.& Abd al-Hamid, M. M.& Ashur, A. H.. Ion beam effects on AC conductivity of Ge-Se-Bi films. Arab Journal of Nuclear Sciences and Applications. 2016. Vol. 49, no. 4, pp.31-40.
https://search.emarefa.net/detail/BIM-724543
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 39-40
Record ID
BIM-724543
