Computer simulation model of drift mobility of amorphous silicon different localized states

Dissertant

al-Dafai, Husayn Ali Husayn

University

University of Technology

Faculty

-

Department

Department of Electrical Engineering

University Country

Iraq

Degree

Master

Degree Date

1998

English Abstract

Drift mobility tinkle life time, have an important role in controlling the characteristics of materials and their applications.

In this study a comprehensive computer simulation is developed to calculate the drill mobility for electrons and holes of amorphous silicon, for different localized density of states.

In this study the (S.

G) Current-Control-Type method is used to solve electrons and holes continuity equations and Poisson's equation.

This has been done by performing some manipulation on these equations to suit amorphous silicon.

Different localized density of states has been investigated using the following models : 1.

Asymmetrical Model. 2.

V-Shoped Model.

UiShaped Model. Calculations of the drift mobility for electrons and holes, for different models of localized density of states and for different values of band mobilities have been performed Then the limiting carrier has been specified for each model and then a comparison between the three models has been done.

It was found that the asymmetrical model is the most realistic model, since it is easy to specify the limiting carrier.

Main Subjects

Electronic engineering

Topics

• Amorphous semiconductors

• APA
• MLA
• AMA

Language

English

Data Type

Arab Theses

Record ID

BIM-306202