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Computer simulation model of drift mobility of amorphous silicon different localized states
Dissertant
University
University of Technology
Faculty
-
Department
Department of Electrical Engineering
University Country
Iraq
Degree
Master
Degree Date
1998
English Abstract
Drift mobility tinkle life time, have an important role in controlling the characteristics of materials and their applications.
In this study a comprehensive computer simulation is developed to calculate the drill mobility for electrons and holes of amorphous silicon, for different localized density of states.
In this study the (S.
G) Current-Control-Type method is used to solve electrons and holes continuity equations and Poisson's equation.
This has been done by performing some manipulation on these equations to suit amorphous silicon.
Different localized density of states has been investigated using the following models : 1.
Asymmetrical Model. 2.
V-Shoped Model.
UiShaped Model. Calculations of the drift mobility for electrons and holes, for different models of localized density of states and for different values of band mobilities have been performed Then the limiting carrier has been specified for each model and then a comparison between the three models has been done.
It was found that the asymmetrical model is the most realistic model, since it is easy to specify the limiting carrier.
Main Subjects
Topics
American Psychological Association (APA)
al-Dafai, Husayn Ali Husayn. (1998). Computer simulation model of drift mobility of amorphous silicon different localized states. (Master's theses Theses and Dissertations Master). University of Technology, Iraq
https://search.emarefa.net/detail/BIM-306202
Modern Language Association (MLA)
al-Dafai, Husayn Ali Husayn. Computer simulation model of drift mobility of amorphous silicon different localized states. (Master's theses Theses and Dissertations Master). University of Technology. (1998).
https://search.emarefa.net/detail/BIM-306202
American Medical Association (AMA)
al-Dafai, Husayn Ali Husayn. (1998). Computer simulation model of drift mobility of amorphous silicon different localized states. (Master's theses Theses and Dissertations Master). University of Technology, Iraq
https://search.emarefa.net/detail/BIM-306202
Language
English
Data Type
Arab Theses
Record ID
BIM-306202