Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets
Joint Authors
Feng, Xian-Yang
Wang, Zhe
Zhang, Chang-Wen
Wang, Pei-Ji
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-06-26
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
The electronic and magnetic properties of IIIA group doped ZnO nanosheets (ZnONSs) are investigated by the first principles.
The results show that the band gap of ZnO nanosheets increases gradually along with Al, Ga, and In ions occupying Zn sites and O sites.
The configuration of Al atoms replacing Zn atoms is more stable than other doped.
The system shows half-metallic characteristics for In-doped ZnO nanosheets.
American Psychological Association (APA)
Feng, Xian-Yang& Wang, Zhe& Zhang, Chang-Wen& Wang, Pei-Ji. 2013. Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1007342
Modern Language Association (MLA)
Feng, Xian-Yang…[et al.]. Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets. Journal of Nanomaterials No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-1007342
American Medical Association (AMA)
Feng, Xian-Yang& Wang, Zhe& Zhang, Chang-Wen& Wang, Pei-Ji. Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1007342
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1007342