Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets

Joint Authors

Feng, Xian-Yang
Wang, Zhe
Zhang, Chang-Wen
Wang, Pei-Ji

Source

Journal of Nanomaterials

Issue

Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2013-06-26

Country of Publication

Egypt

No. of Pages

6

Main Subjects

Chemistry
Civil Engineering

Abstract EN

The electronic and magnetic properties of IIIA group doped ZnO nanosheets (ZnONSs) are investigated by the first principles.

The results show that the band gap of ZnO nanosheets increases gradually along with Al, Ga, and In ions occupying Zn sites and O sites.

The configuration of Al atoms replacing Zn atoms is more stable than other doped.

The system shows half-metallic characteristics for In-doped ZnO nanosheets.

American Psychological Association (APA)

Feng, Xian-Yang& Wang, Zhe& Zhang, Chang-Wen& Wang, Pei-Ji. 2013. Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1007342

Modern Language Association (MLA)

Feng, Xian-Yang…[et al.]. Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets. Journal of Nanomaterials No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-1007342

American Medical Association (AMA)

Feng, Xian-Yang& Wang, Zhe& Zhang, Chang-Wen& Wang, Pei-Ji. Electronic Structure and Energy Band of IIIA Doped Group ZnO Nanosheets. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1007342

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-1007342