Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode
Joint Authors
Chang, Ren-Hao
Yang, Kai-Chao
Chen, Tai-Hong
Lai, Li-Wen
Lee, Tsung-Hsin
Yao, Shiau-Lu
Liu, Day-Shan
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-12-29
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
We prepare a zinc oxide- (ZnO-) based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO-) ZnO ohmic contact electrode and Ni/Au Schottky metal.
After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2) and ammonium sulfide (NH4)2Sx solutions, respectively, are employed to modify the undoped ZnO layer surface.
Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode.
Through the X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) investigations, the compensation effect as evidence of the increases in the O–H and OZn acceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2 solution is responsible for the improvement of the ZnO-based Schottky diode.
By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH4)2Sx solution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond and VZn acceptors.
American Psychological Association (APA)
Chang, Ren-Hao& Yang, Kai-Chao& Chen, Tai-Hong& Lai, Li-Wen& Lee, Tsung-Hsin& Yao, Shiau-Lu…[et al.]. 2013. Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-9.
https://search.emarefa.net/detail/BIM-1007948
Modern Language Association (MLA)
Chang, Ren-Hao…[et al.]. Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode. Journal of Nanomaterials No. 2013 (2013), pp.1-9.
https://search.emarefa.net/detail/BIM-1007948
American Medical Association (AMA)
Chang, Ren-Hao& Yang, Kai-Chao& Chen, Tai-Hong& Lai, Li-Wen& Lee, Tsung-Hsin& Yao, Shiau-Lu…[et al.]. Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-9.
https://search.emarefa.net/detail/BIM-1007948
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1007948