A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3O2 and SF6O2
Joint Authors
Oh, Seon-Geun
Park, Kwang-Su
Lee, Young-Jun
Jeon, Jae-Hong
Choe, Hee-Hwan
Seo, Jong-Hyun
Source
Advances in Materials Science and Engineering
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-04
Country of Publication
Egypt
No. of Pages
8
Abstract EN
The characteristics of the dry etching of SiN x :H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system.
The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio.
For the SiN x :H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions.
The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES) intensity of atomic fluorine (685.1 nm and 702.89 nm) and the voltages V H and V L —were investigated.
The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density.
The etch rate was proportional to the product of the OES intensity of atomic fluorine ( I ( F ) ) and the square root of the voltages ( V h + V l ) on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.
American Psychological Association (APA)
Oh, Seon-Geun& Park, Kwang-Su& Lee, Young-Jun& Jeon, Jae-Hong& Choe, Hee-Hwan& Seo, Jong-Hyun. 2014. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3O2 and SF6O2. Advances in Materials Science and Engineering،Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1015750
Modern Language Association (MLA)
Oh, Seon-Geun…[et al.]. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3O2 and SF6O2. Advances in Materials Science and Engineering No. 2014 (2014), pp.1-8.
https://search.emarefa.net/detail/BIM-1015750
American Medical Association (AMA)
Oh, Seon-Geun& Park, Kwang-Su& Lee, Young-Jun& Jeon, Jae-Hong& Choe, Hee-Hwan& Seo, Jong-Hyun. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3O2 and SF6O2. Advances in Materials Science and Engineering. 2014. Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1015750
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1015750