Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

Abstract EN

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs).

Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature.

We could modulate the In, Hf, and Zn components by changing the co-sputtering power.

Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device.

Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process.

Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.