The Low-Temperature Crystallization and Interface Characteristics of ZnInSnOIn Films Using a Bias-Crystallization Mechanism

Abstract EN

This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films.

The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization.

With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from 3.08×10−4 Ω∗cm to 6.3×10−5 Ω∗cm.

This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix.

This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately 170∘C) for a short period (≤20 min) during a bias test.

The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.