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GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlNAlGaN Buffer Layer
Author
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-12-25
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
We report the fabrication of GaN Schottky photodiodes (PDs) on Si(111) substrates coated with an AlN/AlGaN buffer multilayer.
It was found that their dark current was much smaller than that of identical devices prepared on sapphire substrates.
With an incident wavelength of 359 nm, the maximum responsivity of the n−-GaN Schottky photodetectors with TiW contact electrodes was 0.1544 A/W, corresponding to a quantum efficiency of 53.4%.
For a given bandwidth of 1 kHz and bias of 5 V, the resultant noise equivalent power (NEP) of n−-GaN Schottky photodetectors with TiW electrodes was 1.033×10-12 W, corresponding to a detectivity (D*) of 1.079×1012 cm-Hz0.5 W−1.
American Psychological Association (APA)
Chang, Sheng-Po. 2012. GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlNAlGaN Buffer Layer. Journal of Nanomaterials،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-1029218
Modern Language Association (MLA)
Chang, Sheng-Po. GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlNAlGaN Buffer Layer. Journal of Nanomaterials No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-1029218
American Medical Association (AMA)
Chang, Sheng-Po. GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlNAlGaN Buffer Layer. Journal of Nanomaterials. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-1029218
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1029218