Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

Abstract EN

Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy.

The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide.

Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide.

The temperature treatment of hafnium oxide shows the evolution of the structure of this material.

Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer.

After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide.