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Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices
Joint Authors
Maity, N. P.
Maity, Reshmi
Baishya, S.
Thapa, R. K.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-08-20
Country of Publication
Egypt
No. of Pages
6
Abstract EN
A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high-k materials ZrO2 and HfO2 has been methodically investigated.
The interface charge densities are analyzed using capacitance-voltage (C-V) method and also conductance (G-V) method.
It indicates that, by reducing the effective oxide thickness (EOT), the interface charge densities (Dit) increases linearly.
For the same EOT, Dit has been found for the materials to be of the order of 1012 cm−2 eV−1 and it is originated to be in good agreement with published fabrication results at p-type doping level of 1×1017 cm−3.
Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.
American Psychological Association (APA)
Maity, N. P.& Maity, Reshmi& Thapa, R. K.& Baishya, S.. 2014. Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices. Advances in Materials Science and Engineering،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1034269
Modern Language Association (MLA)
Maity, N. P.…[et al.]. Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices. Advances in Materials Science and Engineering No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-1034269
American Medical Association (AMA)
Maity, N. P.& Maity, Reshmi& Thapa, R. K.& Baishya, S.. Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices. Advances in Materials Science and Engineering. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1034269
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1034269