Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate
Joint Authors
Ozbay, E.
Arslan, Engin
Demirel, Pakize
Çakmak, Huseyin
Öztürk, Mustafa K.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-11, 11 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-08-10
Country of Publication
Egypt
No. of Pages
11
Abstract EN
The 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate.
The indium (x) concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48.
The Indium content (x), lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10–15) reflection of the AlInN and GaN layers.
The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations) of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.
American Psychological Association (APA)
Arslan, Engin& Demirel, Pakize& Çakmak, Huseyin& Öztürk, Mustafa K.& Ozbay, E.. 2014. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate. Advances in Materials Science and Engineering،Vol. 2014, no. 2014, pp.1-11.
https://search.emarefa.net/detail/BIM-1034335
Modern Language Association (MLA)
Arslan, Engin…[et al.]. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate. Advances in Materials Science and Engineering No. 2014 (2014), pp.1-11.
https://search.emarefa.net/detail/BIM-1034335
American Medical Association (AMA)
Arslan, Engin& Demirel, Pakize& Çakmak, Huseyin& Öztürk, Mustafa K.& Ozbay, E.. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate. Advances in Materials Science and Engineering. 2014. Vol. 2014, no. 2014, pp.1-11.
https://search.emarefa.net/detail/BIM-1034335
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1034335