The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors
Joint Authors
Huang, Chia-Ho
Wen, Dong-Cherng
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-06-11
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
CIGS films are prepared by single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor.
The annealing processes were performed using various Ar pressures, heating rates, and soaking times.
A higher Ar pressure is needed to fabricate highly crystalline CIGS films, as no extra Se-vapor source is supplied.
As the heating rate increases, the surface morphologies of the CIGS films become looser and some cracks are observed.
However, the influence of soaking time is insignificant and the selenization process only requires a short time when the precursors are selenized at a higher temperature with a lower heating rate and a higher Ar pressure.
In this study, a dense chalcopyrite CIGS film with a thickness of about 1.5-1.6 μm, with large grains (~1.2 μm) and no cracking or peeling is obtained after selenizing at a temperature of 550°C, an Ar pressure of 300 Torr, a heating rate of 60°C/min, and a soaking time of 20 min.
By adequate design of the stacked precursor and controlling the annealing parameters, single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor is simplified for the fabrication of a fully crystallized chalcopyrite CIGS absorber layers with good crystallization and large grains.
American Psychological Association (APA)
Huang, Chia-Ho& Wen, Dong-Cherng. 2014. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1037168
Modern Language Association (MLA)
Huang, Chia-Ho& Wen, Dong-Cherng. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors. International Journal of Photoenergy No. 2014 (2014), pp.1-8.
https://search.emarefa.net/detail/BIM-1037168
American Medical Association (AMA)
Huang, Chia-Ho& Wen, Dong-Cherng. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1037168
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1037168