Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO 2 AlNSapphire Template
Joint Authors
Chen, Yu-An
Kuo, Cheng-Huang
Chang, Li-Chuan
Wu, Ji-Pu
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-06-18
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed.
Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids.
These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density.
Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2) and (1 0 2) peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively.
Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation.
We also proposed a growth model based on results of scanning electron microscopy.
American Psychological Association (APA)
Chen, Yu-An& Kuo, Cheng-Huang& Chang, Li-Chuan& Wu, Ji-Pu. 2014. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO 2 AlNSapphire Template. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1039632
Modern Language Association (MLA)
Chen, Yu-An…[et al.]. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO 2 AlNSapphire Template. International Journal of Photoenergy No. 2014 (2014), pp.1-8.
https://search.emarefa.net/detail/BIM-1039632
American Medical Association (AMA)
Chen, Yu-An& Kuo, Cheng-Huang& Chang, Li-Chuan& Wu, Ji-Pu. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO 2 AlNSapphire Template. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1039632
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1039632