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Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs
Joint Authors
Huang, Wei
Hu, Nanzhong
Yu, Zongguang
Li, Haiou
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-01-08
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
A low cost silicon BCD technology in place of high cost SOI BCD technology for monolithic integrated EL driver ICs application is put forward.
Several key technologies are presented.
An advanced SEJTET termination technology was designed instead of the conventional PIOS isolation to obtain smaller chip area and protect HVICs from the occurrence of di/dt effect under PWM operation.
Novel VDMOS/Resurf LDPMOS devices were developed compatibly to obtain the lowest R on , sp , improve silicon utilization, and simplify key process steps.
American Psychological Association (APA)
Huang, Wei& Hu, Nanzhong& Yu, Zongguang& Li, Haiou. 2014. Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041272
Modern Language Association (MLA)
Huang, Wei…[et al.]. Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs. Journal of Nanomaterials No. 2014 (2014), pp.1-5.
https://search.emarefa.net/detail/BIM-1041272
American Medical Association (AMA)
Huang, Wei& Hu, Nanzhong& Yu, Zongguang& Li, Haiou. Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041272
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041272