Memory and Electrical Properties of (100)‎-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Abstract EN

The (100)-oriented aluminum nitride (AlN) thin films were well deposited onto p-type Si substrate by radio frequency (RF) magnetron sputtering method.

The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%.

Regarding the physical properties, the microstructure of as-deposited (002)- and (100)-oriented AlN thin films were obtained and compared by XRD patterns and TEM images.

For electrical properties analysis, we found that the memory windows of (100)-oriented AlN thin films are better than those of (002)-oriented thin films.

Besides, the interface and interaction between the silicon and (100)-oriented AlN thin films was serious important problem.

Finally, the current transport models of the as-deposited and annealed (100)-oriented AlN thin films were also discussed.

From the results, we suggested and investigated that large memory window of the annealed (100)-oriented AlN thin films was induced by many dipoles and large electric field applied.