Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

Abstract EN

A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si), which is utilized for antireflection.

Wafer-scale polystyrene (PS) monolayer colloidal crystal was developed as templates by spin-coating method.

Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film.

Nanohole arrays were fabricated by Si dry etching.

A series of nanohole arrays were fabricated with the similar diameter but with different depth.

It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask.

The antireflection ability of these Si-hole arrays was investigated.

The results show that the reflection decreases with the depth of the Si-hole.

The deepest Si-hole arrays show the best antireflection ability (reflection < 9%) at long wavelengths (>600 nm), which was about 28 percent of the nonpatterned silicon wafer’s reflection.

The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.