AlGaNGaN High Electron Mobility Transistors with Multi-MgxNyGaN Buffer
Joint Authors
Chang, Shoou-Jinn
Chang, P. C.
Lee, K. H.
Wang, Z. H.
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-07-20
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer.
Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design.
Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.
American Psychological Association (APA)
Chang, P. C.& Lee, K. H.& Wang, Z. H.& Chang, Shoou-Jinn. 2014. AlGaNGaN High Electron Mobility Transistors with Multi-MgxNyGaN Buffer. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-4.
https://search.emarefa.net/detail/BIM-1041691
Modern Language Association (MLA)
Chang, P. C.…[et al.]. AlGaNGaN High Electron Mobility Transistors with Multi-MgxNyGaN Buffer. Journal of Nanomaterials No. 2014 (2014), pp.1-4.
https://search.emarefa.net/detail/BIM-1041691
American Medical Association (AMA)
Chang, P. C.& Lee, K. H.& Wang, Z. H.& Chang, Shoou-Jinn. AlGaNGaN High Electron Mobility Transistors with Multi-MgxNyGaN Buffer. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-4.
https://search.emarefa.net/detail/BIM-1041691
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041691