Resistive Switching Characteristics of a SiO x Layer with CF 4 Plasma Treatment

Abstract EN

A 20 nm SiOx layer is deposited using radio-frequency sputtering to form the resistive switching layer of a Cu/SiO x/Pt memory device.

The SiO x-based device demonstrates the resistive switching characteristics with an electrochemical reaction.

CF4 plasma treatment was used to modify the SiOx layer and incorporate fluorine atoms into the SiO x layer.

The bombardment damage and fluorine incorporation caused the SiO x film to form a stack-like structure.

This reduced the operating voltage and improved switching dispersion.

The fluorine repaired the Cu/SiO x interface, thus increasing the barrier height of the Cu/SiO x interface and the resistance of the high resistance state.

A statistical analysis of the conducting filament formation was performed in order to evaluate the number of formation/rupture sites.

The resistive switching of the CF4-treated sample had higher possibility to use the same filament sites; thus, the CF4-treated sample had stable resistive switching behavior.