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Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe SourceDrain
Joint Authors
Tsai, Shih-Chang
Wu, San-Lein
Chen, Jone-Fang
Wang, Bo-Chin
Huang, Po Chin
Tsai, Kai-Shiang
Kao, Tsung-Hsien
Yang, Chih-Wei
Chen, Cheng-Guo
Lo, Kun-Yuan
Cheng, Osbert
Fang, Yean-Kuen
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-03-30
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously.
It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D.
The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel.
Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors.
This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.
American Psychological Association (APA)
Tsai, Shih-Chang& Wu, San-Lein& Chen, Jone-Fang& Wang, Bo-Chin& Huang, Po Chin& Tsai, Kai-Shiang…[et al.]. 2014. Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe SourceDrain. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1041902
Modern Language Association (MLA)
Tsai, Shih-Chang…[et al.]. Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe SourceDrain. Journal of Nanomaterials No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-1041902
American Medical Association (AMA)
Tsai, Shih-Chang& Wu, San-Lein& Chen, Jone-Fang& Wang, Bo-Chin& Huang, Po Chin& Tsai, Kai-Shiang…[et al.]. Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe SourceDrain. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1041902
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041902