High Performance Enhancement-Mode AlGaNGaN MIS-HEMT with Selective Fluorine Treatment

Abstract EN

A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.

The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT).

First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field ( E -field) between the gate and drain by the assisted depletion effect but also reduces the E -field peak at the gate end, leading to a higher breakdown voltage (BV).

Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current ( I D ).

Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV.

Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current ( I D , s a t ) by 28%.