High Performance Enhancement-Mode AlGaNGaN MIS-HEMT with Selective Fluorine Treatment
Joint Authors
Yang, Chao
Xiong, Jiayun
Wei, Jie
Wu, Junfeng
Zhang, Bo
Luo, Xiaorong
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-08-10
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.
The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT).
First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field ( E -field) between the gate and drain by the assisted depletion effect but also reduces the E -field peak at the gate end, leading to a higher breakdown voltage (BV).
Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current ( I D ).
Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV.
Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT), SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current ( I D , s a t ) by 28%.
American Psychological Association (APA)
Yang, Chao& Xiong, Jiayun& Wei, Jie& Wu, Junfeng& Zhang, Bo& Luo, Xiaorong. 2015. High Performance Enhancement-Mode AlGaNGaN MIS-HEMT with Selective Fluorine Treatment. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-7.
https://search.emarefa.net/detail/BIM-1052240
Modern Language Association (MLA)
Yang, Chao…[et al.]. High Performance Enhancement-Mode AlGaNGaN MIS-HEMT with Selective Fluorine Treatment. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-7.
https://search.emarefa.net/detail/BIM-1052240
American Medical Association (AMA)
Yang, Chao& Xiong, Jiayun& Wei, Jie& Wu, Junfeng& Zhang, Bo& Luo, Xiaorong. High Performance Enhancement-Mode AlGaNGaN MIS-HEMT with Selective Fluorine Treatment. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-7.
https://search.emarefa.net/detail/BIM-1052240
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052240