Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications
Joint Authors
Yu, Chen-hui
Liu, Pei-sheng
Chen, X. Y.
Luo, X. D.
Xu, W. W.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-03-22
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and high k gate oxide HfO2 layer have been investigated in detail.
The influences of Si IPL thickness, gate oxide HfO2 thickness, the doping depth, and concentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages have been individually simulated and analyzed.
The determination of the above parameters is suggested based on their effect on maximum drain current, leakage current, saturated voltage, and so forth.
It is found that the channel length decreases with the increase of the maximum drain current and leakage current simultaneously.
Short channel effects start to appear when the channel length is less than 0.9 μm and experience sudden sharp increases which make device performance degrade and reach their operating limits when the channel length is further lessened down to 0.5 μm.
The results demonstrate the usefulness of short channel simulations for designs and optimization of next-generation electrical and photonic devices.
American Psychological Association (APA)
Yu, Chen-hui& Chen, X. Y.& Luo, X. D.& Xu, W. W.& Liu, Pei-sheng. 2015. Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052260
Modern Language Association (MLA)
Yu, Chen-hui…[et al.]. Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1052260
American Medical Association (AMA)
Yu, Chen-hui& Chen, X. Y.& Luo, X. D.& Xu, W. W.& Liu, Pei-sheng. Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052260
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052260