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Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs
Joint Authors
Liao, Yiming
Ji, Xiaoli
Guo, Qiang
Yan, Feng
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-04-27
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We examine the impact of negative bias temperature (NBT) stress on the fluctuations in ID and IG for deeply scaled pMOSFETs and find that the relative high NBT stress triggers IG-RTN and ID-step.
Through the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress some traps keep charged state for very long time, as observing step-like behaviors in ID, while other traps emit charged holes to the gate side through TAT process, which originate both ID-step and ID-RTN.
American Psychological Association (APA)
Liao, Yiming& Ji, Xiaoli& Guo, Qiang& Yan, Feng. 2015. Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052271
Modern Language Association (MLA)
Liao, Yiming…[et al.]. Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1052271
American Medical Association (AMA)
Liao, Yiming& Ji, Xiaoli& Guo, Qiang& Yan, Feng. Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052271
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052271