High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets
Joint Authors
Kim, Hyun Jung
Park, Yeonjoon
Bae, Hyung Bin
Choi, Sang H.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-04-23
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance.
The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016 per cm3 doping density).
Therefore, radio frequency devices which are made with rhombohedral SiGe on c-plane sapphire can potentially run a few times faster than RF devices on SOS wafers.
NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane.
Several samples of rhombohedrally grown SiGe on c-plane sapphire show high percentage of a single crystalline over 95% to 99.5%.
The electron mobilities of the tested samples are between those of single crystals Si and Ge.
The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3 doping concentration.
American Psychological Association (APA)
Kim, Hyun Jung& Park, Yeonjoon& Bae, Hyung Bin& Choi, Sang H.. 2015. High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-9.
https://search.emarefa.net/detail/BIM-1052311
Modern Language Association (MLA)
Kim, Hyun Jung…[et al.]. High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-9.
https://search.emarefa.net/detail/BIM-1052311
American Medical Association (AMA)
Kim, Hyun Jung& Park, Yeonjoon& Bae, Hyung Bin& Choi, Sang H.. High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-9.
https://search.emarefa.net/detail/BIM-1052311
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052311