A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

Abstract EN

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2 casting alloy and Ta metal.

Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated.

The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES).

When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed.

When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3 phases.

The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).