Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process
Joint Authors
Chelly, Avraham
Karsenty, Avraham
Source
Active and Passive Electronic Components
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-10-28
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) for I-V characterizations.
In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL) effect at RT.
However, this effect was suppressed at 77 K.
If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.
American Psychological Association (APA)
Karsenty, Avraham& Chelly, Avraham. 2015. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process. Active and Passive Electronic Components،Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1053833
Modern Language Association (MLA)
Karsenty, Avraham& Chelly, Avraham. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process. Active and Passive Electronic Components No. 2015 (2015), pp.1-5.
https://search.emarefa.net/detail/BIM-1053833
American Medical Association (AMA)
Karsenty, Avraham& Chelly, Avraham. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process. Active and Passive Electronic Components. 2015. Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1053833
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1053833